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Número de pieza | MTC4503AQ8 | |
Descripción | P- & N-Channel Enhancement Mode Power MOSFET | |
Fabricantes | CYStech Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MTC4503AQ8 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
No Preview Available ! CYStech Electronics Corp.
Spec. No. : C384Q8
Issued Date : 2012.04.30
Revised Date : 2014.03.07
Page No. : 1/12
N- AND P-Channel Logic Level Enhancement Mode MOSFET
MTC4503AQ8 BVDSS
N-CH
30V
ID 11A
RDSON(typ.) @VGS=(-)10V 13mΩ
Description
RDSON(typ.) @VGS=(-)4.5V 20mΩ
P-CH
-30V
-9.5A
21mΩ
34mΩ
The MTC4503AQ8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single
SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications.
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTC4503AQ8
Outline
SOP-8
G:Gate S:Source D:Drain
Ordering Information
Device
MTC4503AQ8-0-T3-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTC4503AQ8
CYStek Product Specification
1 page CYStech Electronics Corp.
Spec. No. : C384Q8
Issued Date : 2012.04.30
Revised Date : 2014.03.07
Page No. : 5/12
Typical Characteristics(Cont.) : Q1( N-channel)
Capacitance vs Drain-to-Source Voltage
1000
Threshold Voltage vs Junction Tempearture
1.4
Ciss 1.2
ID=250μA
1
C oss
100
0.8
Crss
0.6
10
0.1
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
10
1
0.4
-60
-20 20
60 100
Tj, Junction Temperature(°C)
140
Gate Charge Characteristics
10
VDS=15V
8 ID=6A
6
0.1 VDS=10V
Pulsed
Ta=25°C
0.01
0.001
0.01 0.1
1
ID, Drain Current(A)
10
Maximum Safe Operating Area
100
RDS(ON) Limit
10
100μs
1ms
10ms
1 100m
1s
0.1
TA=25°C, Tj=150°C, VGS=10V
RθJA=78°C/W,Single Pulse
DC
0.01
0.01
0.1 1 10
VDS, Drain-Source Voltage(V)
100
4
2
0
0 2 4 6 8 10 12 14
Qg, Total Gate Charge(nC)
Maximum Drain Current vs JunctionTemperature
10
9
8
7
6
5
4
3
2
1
0
25
TA=25°C, VGS=10V
RθJA=78°C/W
50 75 100 125 150
TJ, Junction Temperature(°C)
175
MTC4503AQ8
CYStek Product Specification
5 Page CYStech Electronics Corp.
Spec. No. : C384Q8
Issued Date : 2012.04.30
Revised Date : 2014.03.07
Page No. : 11/12
Recommended wave soldering condition
Product
Peak Temperature
Pb-free devices
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Pb-free Assembly
Average ramp-up rate
(Tsmax to Tp)
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
Time 25 °C to peak temperature
6 minutes max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTC4503AQ8
CYStek Product Specification
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet MTC4503AQ8.PDF ] |
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