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Número de pieza | AO4400 | |
Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AO4400 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! July 2001
AO4401
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4401 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications.
Features
VDS (V) = -30V
ID = -6.1 A
RDS(ON) < 46mΩ (VGS = -10V)
RDS(ON) < 61mΩ (VGS = -4.5V)
RDS(ON) < 117mΩ (VGS = -2.5V)
SOIC-8
Top View
SD
SD
SD
GD
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
Junction and Storage Temperature Range
PD
TJ, TSTG
Maximum
-30
±12
-6.1
-5.1
-60
3
2.1
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
31
59
16
Max
40
75
24
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page ALPHA & OMEGA
SEMICONDUCTOR, INC.
SO-8 Package Data
SYMBOLS
A
A1
A2
b
c
D
E1
e
E
h
L
aaa
θ
DIMENSIONS IN MILLIMETERS
MIN NOM MAX
1.45 1.50 1.55
0.00 −−− 0.10
−−− 1.45 −−−
0.33 −−− 0.51
0.19 −−− 0.25
4.80 −−− 5.00
3.80 −−− 4.00
1.27 BSC
5.80 −−− 6.20
0.25 −−− 0.50
0.40 −−− 1.27
−−− −−− 0.10
0° −−−
8°
DIMENSIONS IN INCHES
MIN NOM MAX
0.057
0.000
−−−
0.013
0.007
0.189
0.150
0.228
0.010
0.016
−−−
0°
0.059
−−−
0.057
−−−
−−−
−−−
−−−
0.050 BSC
−−−
−−−
−−−
−−−
−−−
0.061
0.004
−−−
0.020
0.010
0.197
0.157
0.244
0.020
0.050
0.004
8°
θ
NOTE:
1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN.
THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD
2. TOLERANCE ±0.100 mm (4 mil) UNLESS OTHERWISE
SPECIFIED
3. COPLANARITY : 0.1000 mm
4. DIMENSION L IS MEASURED IN GAGE PLANE
PACKAGE MARKING DESCRIPTION
NOTE:
LG - AOS LOGO
PARTN - PART NUMBER CODE.
F - FAB LOCATION
A - ASSEMBLY LOCATION
Y - YEAR CODE
W - WEEK CODE.
L N - ASSEMBLY LOT CODE
SO-8 PART NO. CODE
PART NO.
AO4400
AO4401
CODE
4400
4401
PART NO.
AO4800
AO4801
CODE
4800
4801
PART NO. CODE
AO4700
AO4701
4700
4701
RECOMMENDED LAND PATTERN
UNIT: mm
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet AO4400.PDF ] |
Número de pieza | Descripción | Fabricantes |
AO4400 | N-Channel Enhancement Mode Field Effect Transistor | Alpha & Omega Semiconductors |
AO4401 | P-Channel Enhancement Mode Field Effect Transistor | Alpha & Omega Semiconductors |
AO4401 | P-Channel MOSFET | Freescale |
AO4402 | N-Channel Enhancement Mode Field Effect Transistor | Alpha & Omega Semiconductors |
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