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PDF RSD200N05FRA Data sheet ( Hoja de datos )
| Número de pieza | RSD200N05FRA | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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4V Drive Nch MOSFET
RSD200N05FRA
zStructure
Silicon N-channel MOSFET
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
zApplication
Switching
Data Sheet
AEC-Q101 Qualified
z Dimensions (Unit : mm)
CPT3
(SC-63)
<SOT-428>
zPackaging specifications
Package
Type Code
Basic ordering unit (pieces)
RSD200N05FRA
Taping
TL
2500
{
z Absolute maximum ratings (Ta = 25qC)
Parameter
Symbol Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
VGSS
ID
IDP *1
IS
ISP *1
PD *2
Tch
Tstg
45
r20
r20
r40
16
40
20
150
55 to 150
*1 Pwᱨ10Ps, Duty cycleᱨ1%
*2 Tc=25qC
Unit
V
V
A
A
A
A
W
qC
qC
z Inner circuit
∗1
∗2
(1) Gate
(2) Drain
(3) Source
(1) (2) (3)
1 ESD PROTECTION DIODE
2 BODY DIODE
zThermal resistance
Parameter
Channel to Case
* Tc=25qC
Symbol
Rth (ch-c)*
Limits
6.25
Unit
qC / W
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
20116.068 - Rev.A
1 page  
RSD200N05FRA
䚷
Data Sheet
Fig.13 Typical Capacitance vs. Drain-Source Voltage
100000
10000
Ta=25rC
f=1MHz
VGS=0V
1000
100
Ciss
Coss
Crss
10
1
0.01
0.1 1 10
Drain-Source Voltage : VDS [V]
100
Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width
10
TC=25rC
Single Pulse
1
Fig.14 Maximum Safe Operating Area
100
10
Operation in this area
is limited by RDS(on)
(VGS = 10V)
1
0.1
Tc=25rC
Single Pulse
0.01
0.1
1
10
Drain-Source Voltage : VDS [ V ]
PW = 100μs
PW = 1ms
PW = 10ms
100
0.1
0.01
0.0001 0.001
Rth(ch-c)=6.25rC/W
Rth(ch-a)(t)=r(t)Rth(ch-a)
0.01
0.1
1
10
Pulse width : Pw (s)
100 1000
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
5/6
20116.086 - Rev.A
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet RSD200N05FRA.PDF ] | |
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