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PDF IXXH110N65C4 Data sheet ( Hoja de datos )
| Número de pieza | IXXH110N65C4 | |
| Descripción | IGBT | |
| Fabricantes | IXYS | |
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XPTTM 650V IGBT
GenX4TM
Extreme Light Punch Through
IGBT for 20-60 kHz Switching
IXXH110N65C4
VCES = 650V
IC110 = 110A
VCE(sat) 2.35V
tfi(typ) = 30ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
ILRMS
IC110
ICM
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TC = 25°C (Chip Capability)
Terminal Current Limit
TC = 110°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 150°C, RG = 2
Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 10, Non Repetitive
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
650 V
650 V
±20 V
±30 V
234 A
160 A
110 A
600 A
ICM = 220
@VCE VCES
10
A
μs
880
-55 ... +175
175
-55 ... +175
300
260
1.13/10
6
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 4mA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
110A,
VGE
=
15V,
Note
1
TJ
=
150C
Characteristic Values
Min. Typ. Max.
650 V
4.0 6.5 V
25 A
2 mA
100 nA
1.98
2.34
2.35 V
V
TO-247 AD
G
CE
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
Optimized for 20-60kHz Switching
Square RBSOA
Avalanche Capability
Short Circuit Capability
International Standard Package
Advantages
High Power Density
175°C Rated
Extremely Rugged
Low Gate Drive Requirement
Applications
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
High Frequency Power Inverters
© 2015 IXYS CORPORATION, All Rights Reserved
DS100497B(01/15)
1 page  
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2
2.4
2.0
1.6
1.2
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
Eoff Eon - - - -
TJ = 150ºC , VGE = 15V
VCE = 400V
I C = 110A
I C = 55A
4 6 8 10 12
RG - Ohms
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
Eoff Eon - - - -
RG = 2ΩVGE = 15V
VCE = 400V
IC = 110A
16
14
12
10
8
6
4
2
0
14
12
10
8
6
0.8 4
0.4
I C = 55A
2
0.0
25
50 75 100
TJ - Degrees Centigrade
125
0
150
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
160 170
140 t f i
td(off) - - - -
RG = 2Ω, VGE = 15V
120 VCE = 400V
150
100
80 130
60 TJ = 25ºC, 150ºC
40 110
20
0 90
55 60 65 70 75 80 85 90 95 100 105 110
IC - Amperes
IXXH110N65C4
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
2.6
Eoff Eon - - - -
2.2 RG = 2ΩVGE = 15V
VCE = 400V
1.8
1.4
TJ = 150ºC
1.0
0.6
TJ = 25ºC
8
7
6
5
4
3
0.2
55
160
140
120
2
60 65 70 75 80 85 90 95 100 105 110
IC - Amperes
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
t f i td(off) - - - -
TJ = 150ºC, VGE = 15V
VCE = 400V
450
400
350
100 300
80
I C = 110A
60
40
I C = 55A
250
200
150
20 100
0 50
2 4 6 8 10 12 14
RG - Ohms
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
120 190
t f i td(off) - - - -
100 RG = 2Ω, VGE = 15V
VCE = 400V
170
80 150
60
I C = 110A
40
20
I C = 55A
130
110
90
0 70
25 50 75 100 125 150
TJ - Degrees Centigrade
© 2015 IXYS CORPORATION, All Rights Reserved
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXXH110N65C4.PDF ] | |
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