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PDF MUN5230DW1T1 Data sheet ( Hoja de datos )
| Número de pieza | MUN5230DW1T1 | |
| Descripción | Dual Bias Resistor Transistors | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Dual Bias Resistor Transistors
NPN Silicon Surface Mount Transistors with
Monolithic Bias Resistor Network
MUN5211DW1T1
SERIES
Motorola Preferred Devices
The BRT (Bias Resistor Transistor) contains a single transistor with a
monolithic bias network consisting of two resistors; a series base resistor and a
base–emitter resistor. These digital transistors are designed to replace a single
device and its external resistor bias network. The BRT eliminates these
individual components by integrating them into a single device. In the
MUN5211DW1T1 series, two BRT devices are housed in the SOT–363
package which is ideal for low power surface mount applications where board
space is at a premium.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7 inch/3000 Unit Tape and Reel.
65
4
123
CASE 419B–01, STYLE 1
SOT–363
(3)
Q1
R2
(2)
R1 R2
R1
(1)
Q2
(4) (5)
(6)
MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2)
Rating
Symbol
Value
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
THERMAL CHARACTERISTICS
VCBO
VCEO
IC
50
50
100
Thermal Resistance — Junction-to-Ambient (surface mounted)
RθJA
Operating and Storage Temperature Range
Total Package Dissipation @ TA = 25°C(1)
TJ, Tstg
PD
DEVICE MARKING AND RESISTOR VALUES: MUN5211DW1T1 SERIES
833
– 65 to +150
*150
Device
Marking
R1 (K)
MUN5211DW1T1
MUN5212DW1T1
MUN5213DW1T1
MUN5214DW1T1
MUN5215DW1T1(2)
MUN5216DW1T1(2)
MUN5230DW1T1(2)
MUN5231DW1T1(2)
MUN5232DW1T1(2)
MUN5233DW1T1(2)
MUN5234DW1T1(2)
MUN5235DW1T1(2)
7A
7B
7C
7D
7E
7F
7G
7H
7J
7K
7L
7M
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
Unit
Vdc
Vdc
mAdc
°C/W
°C
mW
R2 (K)
10
22
47
47
∞
∞
1.0
2.2
4.7
47
47
47
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–761
1 page  
MUN5211DW1T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5212DW1T1
1
IC/IB = 10
0.1 TA = –25°C
0.01
25°C
75°C
1000
100
VCE = 10 V
TA = 75°C
25°C
–25°C
0.001
0
4
3
2
1
0
0
20 40
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) versus IC
50
f = 1 MHz
IE = 0 V
TA = 25°C
10 20 30 40
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 9. Output Capacitance
50
100
VO = 0.2 V
10
1
10
1 10 100
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
100 75°C 25°C
TA = –25°C
10
1
0.1
0.01
0.001
0
VO = 5 V
2 46 8
Vin, INPUT VOLTAGE (VOLTS)
10
Figure 10. Output Current versus Input Voltage
TA = –25°C
75°C 25°C
0.1
0 10
20
30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–765
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MUN5230DW1T1.PDF ] | |
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