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PDF BSX32 Data sheet ( Hoja de datos )
| Número de pieza | BSX32 | |
| Descripción | NPN SILICON SWITCHING TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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BSX32
CASE 79, STYLE 1
TO-39 (TO-205AD)
SWITCHING TRANSISTOR
NPN SILICON
Refer to 2N3725 for graphs.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Device Dissipation @T/\ = 25°C
Derate above 25°C
Total Device Dissipation @Tc = 25°C
Derate above 25 aC
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
ic
PD
pd
JJ- T stg
Value
40
65
6
1
0.8
4.6
3.5
2.0
-65 to +200
Unit
Vdc
Vdc
Vdc
Adc
Watt
mW/°C
Watt
mW/°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
c Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 10 mA, Bl = 0)(1)
Collector-Base Breakdown Voltage
dC = 100 nA, l£ = 0)
Emitter-Base Breakdown Voltage
(IE = 100 uA. Ic = 0)
Collector Cutoff Current (Vcb = 50 V, Ie = 0)
ON CHARACTERISTICS
DC Current Gain
(Vce = 1 V, Ic = 10 mA)(1)
(VcE = 1 V, Ic = 100 mA)(1)
(Vce = 1 V, Ic = 500 mA)(1)
(Vce = 5 v, ci = 1 Aid)
(VcE = 1 V, Ic = 100 mA, TA = -55°C)(1)
(Vce = 1 V, Ic = 500mA)(1)
Collector-Emitter Saturation Voltage
dC = 100 mA, Ib = 10 mA)(1)
(IC = 500 mA, Ib = 50 mA)(1)
(IC = 1 A, Ib = 100 mA)(1)
Base-Emitter Saturation Voltage
(IC = 100 mA.'lB = 10 mA)(1)
(IC = 500 mA, Ib = 50 mA((1)
(IC = 1 A, Ib = 100 mA)(1)
SMALL SIGNAL CHARACTERISTICS
Small Signal Current Gain
dC = 50 mA, VCE = 1 V, f = 1 00 MHz)
Output Capacitance
(VcB = 10 V)
Input Capacitance
(Veb = 0.5 V)
Turn On Time
(IC = 500 mA, Ib 1 = 50 mA)
Turn Off Time
(IC = 500 mA, lB1 = lB2 = 50 mA)
' Pulsed
:
Pulse
Duration
=
300
us,
Duty
Cycle
=
1%.
Symbol Min
V(BR)CE0
V(BR)CBO
V(BR)EBO
ICBO
40
65
6
hFE
VCE(sat)
30
60
25
20
30
15
VBE(sat)
hfe
Cob
Cib
ton
toff
3
4
150
0.25
0.5
0.85
0.9
1.5
2
10
60
60
60
Unit
V
V
V
HA
V
V
PF
PF
ns
ns
4-248
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BSX32.PDF ] | |
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