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PDF SSF8205U Data sheet ( Hoja de datos )
| Número de pieza | SSF8205U | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Silikron | |
| Logotipo |  |
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Main Product Characteristics:
VDSS
18V
RDS(on) 20mohm(typ.)
ID 4.5A
SOT23-6
Features and Benefits:
Advanced trench MOSFET process technology
Special designed for buttery protection, load
switching and general power management
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
SSF8205U
D1
G1
G2
D2
S1 S2
Marking and pin
Assignment
Schematic diagram
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in buttery protection, power switching application and a wide variety of other
applications
Absolute max Rating:
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
TJ,TSTG
Limit
18
±10
4.5
25
1.25
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Resistance
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
100 ℃/W
©Silikron Semiconductor CO.,LTD.
2011.05.25
www.silikron.com
Version :1.0
page 1 of 9
1 page  
TJ-Junction Temperature(℃)
Figure 7: Power Dissipation
Qg Gate Charge (nC)
Figure 9： Gate Charge
Figure 11: Safe Operation Area
SSF8205U
TJ-Junction Temperature(℃)
Figure 8： Drain Current
Vds Drain-Source Voltage (V)
Figure 10: Capacitance vs Vds
©Silikron Semiconductor CO.,LTD.
2011.05.25
www.silikron.com
Version : 1.0
page 5 of 9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SSF8205U.PDF ] | |
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