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Número de pieza | IRL3103D1 | |
Descripción | MOSFET & SCHOTTKY RECTIFIER | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRL3103D1 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! PD 9.1608C
IRL3103D1
FETKYTM MOSFET & SCHOTTKY RECTIFIER
l Copackaged HEXFET® Power MOSFET
and Schottky Diode
l Generation 5 Technology
l Logic Level Gate Drive
l Minimize Circuit Inductance
l Ideal For Synchronous Regulator Application
G
D
VDSS = 30V
RDS(on) = 0.014Ω
ID = 64A
Description
S
The FETKY family of copackaged HEXFET power
MOSFETs and Schottky Diodes offer the designer an
innovative board space saving solution for switching
regulator applications. A low on resistance Gen 5
MOSFET with a low forward voltage drop Schottky
diode and minimized component interconnect
inductance and resistance result in maximized
converter efficiencies.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
64
45
220
2.0
89
0.56
± 16
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W
W/°C
V
°C
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
–––
–––
Max.
1.4
62
Units
°C/W
12/16/97
1 page 2.0
ID = 56A
1.5
IRL3103D1
1.0
0.5
0.0
VGS = 10V
A
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 9. Normalized On-Resistance
Vs. Temperature
10
1 D = 0.50
0 .2 0
0 .1 0
0.05
0.1
0 .0 2
0 .0 1
S ING LE P U LS E
(TH ERMAL RESPONSE)
0.01
0.00001
0.0001
PD M
Notes:
1. Duty factor D = t1 / t 2
t1
t2
2. P ea k TJ = P D M x Z th J C + T C
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case
A
1
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet IRL3103D1.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRL3103D1 | MOSFET & SCHOTTKY RECTIFIER | International Rectifier |
IRL3103D1PBF | MOSFET & SCHOTTKY RECTIFIER | International Rectifier |
IRL3103D1S | MOSFET & SCHOTTKY RECTIFIER | International Rectifier |
IRL3103D2 | MOSFET & SCHOTTKY RECTIFIER | International Rectifier |
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