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Número de pieza | MW4IC915NBR1 | |
Descripción | RF LDMOS Wideband Integrated Power Amplifiers | |
Fabricantes | Motorola Semiconductors | |
Logotipo | ||
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Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
The MW4IC915MB/GMB wideband integrated circuit is designed for GSM
and GSM EDGE base station applications. It uses Freescale’s newest High
Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi−stage
structure. Its wideband On−Chip design makes it usable from 750 to 1000 MHz.
The linearity performances cover all modulations for cellular applications: GSM,
GSM EDGE, TDMA, N−CDMA and W−CDMA.
Final Application
• Typical Performance: VDD = 26 Volts, IDQ1 = 60 mA, IDQ2 = 240 mA,
Pout = 15 Watts CW, Full Frequency Band (860−960 MHz)
Power Gain — 30 dB
Power Added Efficiency — 44%
Driver Application
• Typical GSM/GSM EDGE Performances: VDD = 26 Volts, IDQ1 = 60 mA,
IDQ2 = 240 mA, Pout = 3 Watts Avg., Full Frequency Band (869−894 MHz
and 921−960 MHz)
Power Gain — 31 dB
Power Added Efficiency — 19%
Spectral Regrowth @ 400 kHz Offset = −65 dBc
Spectral Regrowth @ 600 kHz Offset = −83 dBc
EVM — 1.5%
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 15 Watts CW
Output Power
• Characterized with Series Equivalent Large−Signal Impedance Parameters
• On−Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
• Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
• On−Chip Current Mirror gm Reference FET for Self Biasing Application(1)
• Integrated ESD Protection
• N Suffix Indicates Lead−Free Terminations
• 200°C Capable Plastic Package
• Also Available in Gull Wing for Surface Mount
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
VRD2
VRG2
VDS1
RFin
VRD1
VRG1
VDS2/RFout
VGS1 Quiescent Current
VGS2 Temperature Compensation
Figure 1. Functional Block Diagram
MW4IC915
Rev. 5, 3/2005
MW4IC915NBR1
MW4IC915GNBR1
MW4IC915MBR1
MW4IC915GMBR1
860 − 960 MHz, 15 W, 26 V
GSM/GSM EDGE, N−CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329−09
TO−272 WB−16
PLASTIC
MW4IC915NBR1(MBR1)
CASE 1329A−03
TO−272 WB−16 GULL
PLASTIC
MW4IC915GNBR1(GMBR1)
GND
VRD2
VRG2
VDS1
VRD1
RFin
VRG1
VGS1
VGS2
NC
GND
1
2
3
4
5
6
7
8
9
10
11
16 GND
15 NC
14
RFout/
VDS2
13 NC
12 GND
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 2. Pin Connections
1. Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes − AN1987.
© Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1
1
1 page www.DataSheet4U.com
C1 VDS1
C2
C3
C6
R1
VGS1
C4
C5
C7
C8
C9
VGS2
R2
MW4IC915MB
C11 Rev 0
C10
L1
C12
C13
VDS2
C14
C15
C16
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 4. MW4IC915NBR1(MBR1)(GNBR1)(GMBR1) Test Fixture Component Layout
RF Device Data
Freescale Semiconductor
MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1
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5 Page www.DataSheet4U.com
NOTES
RF Device Data
Freescale Semiconductor
MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1
11
11 Page |
Páginas | Total 16 Páginas | |
PDF Descargar | [ Datasheet MW4IC915NBR1.PDF ] |
Número de pieza | Descripción | Fabricantes |
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