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PDF 2SK3740 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3740 | |
| Descripción | SWITCHING N-CHANNEL POWER MOSFET | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3740
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3740 is N-channel MOS FET device that
features a low on-state resistance and excellent
switching characteristics, designed for high voltage
applications such as lamp drive, DC/DC converter, and
actuator driver.
FEATURES
• Gate voltage rating: ±30 V
• Low on-state resistance
RDS(on) = 160 mΩ MAX. (VGS = 10 V, ID = 10 A)
• Low gate charge
QG = 47 nC TYP. (VDD = 200 V, VGS = 10 V, ID = 20 A)
• Surface mount package available
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3740-ZK
TO-263 (MP-25ZK)
(TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation
PT1
Total Power Dissipation (TC = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
250
±30
±20
±60
1.5
100
150
–55 to +150
20
40
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 125 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.25 °C/W
83.3 °C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16913EJ1V0DS00 (1st edition)
Date Published November 2003 NS CP(K)
Printed in Japan
2003
1 page  
2SK3740
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
www.DataSheCeHt4AUN.NcoEmL TEMPERATURE
350
VGS = 10 V
300 Pulsed
250
200
150 ID = 20 A
10 A
100
50
0
-50 -25 0 25 50 75 100 125 150 175
Tch - Channel Temperature - °C
1000
100
10
SWITCHING CHARACTERISTICS
td(on)
tr
td(off)
VDD = 125 V
VGS = 10 V
RG = 0 Ω
tf
1
0.1
1 10
ID - Drain Current - A
100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
Pulsed
10 VGS = 10 V
1
0V
0.1
0.01
0
0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
1000
VGS = 0 V
f = 1.0 MHz
Ciss
Coss
100
10
0.1
Cr ss
1 10 100 1000
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
350
300
VDD = 200 V
250 125 V
50 V
200
ID = 20 A
14
12
10
8
150 6
VGS
100 4
50 VDS
2
00
0 10 20 30 40 50
QG - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
VGS = 0 V
di/dt = 100 A/µs
100
10
0.1
1 10
IF - Diode Forward Current - A
100
Data Sheet D16913EJ1V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SK3740.PDF ] | |
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