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PDF AUIRF3805L Data sheet ( Hoja de datos )
| Número de pieza | AUIRF3805L | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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AUTOMOTIVE GRADE
PD - 96319
AUIRF3805
AUIRF3805S
Features
AUIRF3805L
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
D V(BR)DSS
55V
RDS(on) typ. 2.6mΩ
G max. 3.3mΩ
cID (Silicon Limited) 210A
S ID (Package Limited) 160A
Description
D DD
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide
variety of other applications.
DS
G
DS
G
TO-220AB
AUIRF3805
D2Pak
AUIRF3805S
GD
DS
G
TO-262
AUIRF3805L
S
Absolute Maximum Ratings
Gate
Drain
Source
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
dID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package limited)
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
Max.
210
150
160
890
300
2.0
Units
A
W
W/°C
VGS
EAS
EAS (Tested )
IAR
EAR
Gate-to-Source Voltage
eSingle Pulse Avalanche Energy (Thermally limited)
eSingle Pulse Avalanche Energy Tested Value
ÃdAvalanche Current
hRepetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
iSoldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
± 20
650
940
See Fig.12a, 12b, 15, 16
-55 to + 175
y y300
10 lbf in (1.1N m)
V
mJ
A
mJ
°C
kRθJC
iRθCS
iRθJA
jRθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount)
Typ.
–––
0.50
–––
–––
lMax.
0.5
–––
62
40
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
07/20/10
1 page  
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AUIRF3805/S/L
14000
12000
10000
8000
6000
4000
2000
0
1
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID= 75A
16
VDS= 44V
VDS= 28V
12
8
4
0
0 50 100 150 200 250 300
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
100.0
TJ = 175°C
10.0
TJ = 25°C
1.0
0.1
0.0
VGS = 0V
0.4 0.8 1.2 1.6 2.0
VSD, Source-to-Drain Voltage (V)
2.4
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
10msec
1msec
1 Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1 10
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5
5 Page 
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AUIRF3805/S/L
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
Part Number
AUIRF3805S
IR Logo
YWWA
XX or XX
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
11
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| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet AUIRF3805L.PDF ] | |
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