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Número de pieza | MBRF3080CT | |
Descripción | Isolated 30.0AMPS Schottky Barrier Rectifier | |
Fabricantes | Taiwan Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MBRF3080CT (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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COMPLIANCE
MBRF3080CT
Isolated 30.0AMPS Schottky Barrier Rectifier
ITO-220AB
Features
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High Surge capability
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Guarding for overvoltage protection
High temperature soldering guaranteed: 260 ℃/
10 seconds, 0.25"(6.35mm) from case
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
Case: ITO-220AB molded plastic body
Terminals: Pure tin plated, lead free, solderable
per MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in-lbs. Max.
Weight: 1.69 grams
Dimensions in inches and (millimeters)
Marking Diagram
MBRF3080CT = Specific Device Code
G = Green compound
Y = Year
WW = Work Week
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking voltage
Maximum Average Forward Rectified Current
@Tc = 130℃(Total Device)
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
Peak Repetitive Reverse Surge Current
Maximum Instantaneous Forward Voltage at
IF = 15A, TA=25℃
IF = 15A, TA=125℃
IF = 30A, TA=25℃
IF = 30A, TA=125℃
Maximum Reverse Current at Rated DC Blocking Voltage (Note 1)
Ta=25 ℃
Ta=125 ℃
www.DataVSohletaegt4eUra.cteomof change (Rated VR)
Typical Junction Capacitance
Maximum Thermal Resistance Per Leg (Note 2)
Operating Temperature Range
Storage Temperature Range
Note1: Pulse Test : 300us Pulse Width, 1% Duty cycle
Note2: Thermal Resistance from Junction to Case Per Leg
VRRM
VRMS
VDC
IF(AV)
IFSM
IRRM
VF
IR
dV/dt
Cj
RθJC
TJ
TSTG
MBRF3080CT
80
56
80
30
200
0.5
0.84
0.70
0.94
0.82
0.2
10
10,000
360
5
-65 to + 150
-65 to + 175
Unit
V
V
V
A
A
A
V
mA
mA
V/uS
pF
OC/W
OC
OC
Version:A10
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet MBRF3080CT.PDF ] |
Número de pieza | Descripción | Fabricantes |
MBRF3080CT | Isolated 30.0AMPS Schottky Barrier Rectifier | Taiwan Semiconductor |
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MBRF3080CT | Schottky Barrier Rectifiers | Galaxy Microelectronics |
MBRF3080CT | 30 AMPERS ISOLATION SCHOTTKY BARRIER RECTIFIER | GOOD ELECTRONIC |
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