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Número de pieza | MJ4030 | |
Descripción | Silicon PNP Darlingtion Power Transistor | |
Fabricantes | Inchange Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MJ4030 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlingtion Power Transistor
MJ4030
DESCRIPTION
·With TO-3 package
·Respectively complement to type MJ4035
·DARLINGTON
·High DC current gain
APPLICATIONS
·For use as output devices in complementary general
purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-60 V
VCEO Collector-Emitter Voltage
-60 V
VEBO Emitter-Base Voltage
-5 V
IC Collector Current
-16 A
IBB Base Current
-0.5
http://www.DataSheet4U.net/
A
PC Collector Power Dissipation@TC=25℃ 150
W
TJ Junction Temperature
200 ℃
Tstg Storage Temperature
-55~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX
1.17
UNIT
℃/W
isc Website:www.iscsemi.cn
datasheet pdf - http://www.DataSheet4U.net/
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet MJ4030.PDF ] |
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