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PDF AUIRF6218S Data sheet ( Hoja de datos )
| Número de pieza | AUIRF6218S | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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AUTOMOTIVE GRADE AUIRF6218S
Features
l Advanced Planar Technology
l Low On-Resistance
l P-Channel
l Dynamic dV/dT Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed up to
Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
G
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and rugge-
dized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in
Automotive and a wide variety of other applications.
AUIRF6218L
HEXFET® Power MOSFET
D V(BR)DSS
RDS(on) max
S ID
-150V
150m
-27A
D
D
DS
G
D2Pak
AUIRF6218S
GD S
TO-262
AUIRF6218L
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Pa ram ete r
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
EAS
IAR
dv/dt
TJ
T STG
Linear Derating Factor
dSingle Pulse Avalanche Energy (Thermally Limited)
ÃAvalanche Current
ePeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from cas
Mounting torque, 6-32 or M3 screw
Thermal Resistance
RJC
RJA
Pa ram ete r
gJ unc tion- to- Cas e
hJunction-to-Ambient (P CB M ounted, s teady s tate)
Max.
-150
± 20
-27
-19
-110
250
1.6
210
-16
8.2
-55 to + 175
300
10 lbf•in (1.1N•m)
Ty p.
–––
–––
Max.
0.61
40
U nits
V
A
W
W/°C
mJ
A
V/ns
°C
U nits
°C/W
www.irf.com
1
08/20/2012
Free Datasheet http://www.Datasheet4U.com
1 page  
AUIRF6218S/L
100000
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
1
10
-VDS, Drain-to-Source Voltage (V)
100
12.0
10.0
ID= -16A
8.0
VDS= 120V
VDS= 75V
VDS= 30V
6.0
4.0
2.0
0.0
0
10 20 30 40 50 60 70
QG Total Gate Charge (nC)
80
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000.00
100.00
10.00
TJ = 175°C
1.00
TJ = 25°C
VGS = 0V
0.10
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
-VSD, Source-to-Drain Voltage (V)
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10 100μsec
Tc = 25°C
Tj = 175°C
Single Pulse
1
1 10
1msec
10msec
100 1000
-VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
www.irf.com
5
08/20/2012
Free Datasheet http://www.Datasheet4U.com
5 Page 
AUIRF6218S/L
Ordering Information
Base part
number
Package Type
AUIRF6218L
AUIRF6218S
TO-262
D2Pak
Standard Pack
Form
Tube
Tube
Tape and Reel Left
Tape and Reel Right
Complete Part Number
Quantity
50
50
800
800
AUIRF6218L
AUIRF6218S
AUIRF6218STRL
AUIRF6218STRR
www.irf.com
11
08/20/2012
Free Datasheet http://www.Datasheet4U.com
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet AUIRF6218S.PDF ] | |
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