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PDF SiA511DJ Data sheet ( Hoja de datos )
| Número de pieza | SiA511DJ | |
| Descripción | N- and P-Channel 12-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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New Product
SiA511DJ
Vishay Siliconix
N- and P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.040 at VGS = 4.5 V
N-Channel 12 0.048 at VGS = 2.5 V
0.063 at VGS = 1.8 V
0.070 at VGS = - 4.5 V
P-Channel - 12 0.100 at VGS = - 2.5 V
0.140 at VGS = - 1.8 V
PowerPAK SC-70-6 Dual
ID (A)
4.5a
4.5a
4.5a
- 4.5a
- 4.5a
- 4.5a
Qg (Typ.)
4.5 nC
5 nC
FEATURES
• Halogen-free
• TrenchFET® Power MOSFETs
• New Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
APPLICATIONS
• Load Switch for Portable Devices
RoHS
COMPLIANT
1
S1
2
G1
D1
3
D2
D1
6
D2
G2
5
2.05 mm S2
4
2.05 mm
Marking Code
Part # code
EAX
XXX
Lot Traceability
and Date code
Ordering Information: SiA511DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1 S2
G2
G1
S1 D2
N-Channel MOSFET P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Source Drain Current Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
12 - 12
±8
4.5a - 4.5a
4.5a - 4.5a
4.5a, b, c
- 4.3b, c
4.5a, b, c
- 3.4b, c
20 - 10
4.5a - 4.5a
1.6b, c
- 1.6b, c
6.5 6.5
55
1.9b, c
1.9b, c
1.2b, c
1.2b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
N-Channel
P-Channel
Parameter
Symbol
Typ. Max. Typ. Max.
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t≤5s
Steady State
RthJA
RthJC
52 65 52 65
12.5 16 12.5 16
°C/W
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 110 °C/W.
Document Number: 74592
S-80436-Rev. B, 03-Mar-08
www.vishay.com
1
1 page  
New Product
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.12
SiA511DJ
Vishay Siliconix
10
TJ = 150 °C
TJ = 25 °C
1
0.1
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
0.8
0.7
ID = 250 µA
0.6
0.5
0.4
0.3
0.2
0.1
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0.10
0.08
0.06
ID = 4.2 A, 125 °C
0.04
ID = 4.2 A, 25 °C
0.02
012345
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
20
15
10
5
0
0.001 0.01
0.1
1
10 100 1000
Pulse (s)
Single Pulse Power (Junction-to-Ambient)
100
Limited by RDS(on)*
10
100 µs
1 1 ms
10 ms
100 ms
1s
0.1
10 s
DC
TA = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
* VGS
1 10 100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 74592
S-80436-Rev. B, 03-Mar-08
www.vishay.com
5
5 Page 
New Product
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
SiA511DJ
Vishay Siliconix
0.2
0.1
0.1 0.05
0.02
Single Pulse
0.01
10-4
10-3
1
Duty Cycle = 0.5
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 85 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1 1
Square Wave Pulse Duration (s)
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
1000
0.2
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10-1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?74592.
Document Number: 74592
S-80436-Rev. B, 03-Mar-08
www.vishay.com
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet SiA511DJ.PDF ] | |
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