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PDF SiA814DJ Data sheet ( Hoja de datos )
| Número de pieza | SiA814DJ | |
| Descripción | N-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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New Product
SiA814DJ
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Trench Schottky Diode
PRODUCT SUMMARY
VDS (V)
30
RDS(on) (Ω)
0.061 at VGS = 10 V
0.072 at VGS = 4.5 V
0.110 at VGS = 2.5 V
ID (A)a
4.5
4.5
4.5
Qg (Typ.)
3.2 nC
SCHOTTKY PRODUCT SUMMARY
VKA (V)
Vf (V)
Diode Forward Voltage
30 0.56 at 1 A
IF (A)a
2
PowerPAK SC-70-6 Dual
FEATURES
• Halogen-free
• LITTLE FOOT® Plus Schottky Power MOSFET
• New Thermally Enhanced PowerPAK®
SC-70 Package
RoHS
COMPLIANT
- Small Footprint Area
- Low On-Resistance
- Thin 0.75 mm profile
APPLICATIONS
• DC/DC Converter for Portable Devices
• Load Switch for Portable Devices
1
A
2
NC
K
3
D
K
6D
G
5
2.05 mm S
4
2.05 mm
0.75 mm
Marking Code
Part # code
GBX
XXX
Lot Traceability
and Date code
Ordering Information: SiA814DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G
S
N-Channel MOSFET
K
A
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage (MOSFET)
VDS
Reverse Voltage (Schottky)
VKA
Gate-Source Voltage (MOSFET)
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C) (MOSFET)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current (MOSFET)
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
(MOSFET Diode Conduction)
Average Forward Current (Schottky)
TC = 25 °C
TA = 25 °C
IS
IF
Pulsed Forward Current (Schottky)
IFM
TC = 25 °C
Maximum Power Dissipation (MOSFET)
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
PD
Maximum Power Dissipation (Schottky)
TC = 70 °C
TA = 25 °C
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
Soldering Recommendations (Peak Temperature)d, e
Limit
30
30
± 12
4.5a
4.5a
4.3b, c
3.4b, c
15
4.5a
1.6b, c
2b
3
6.5
5
1.9b, c
1.2b, c
6.8
4.3
1.6b, c
1.0b, c
- 55 to 150
260
Unit
V
A
W
°C
Document Number: 68672
S-81176-Rev. A, 26-May-08
www.vishay.com
1
1 page  
New Product
MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
100 0.20
0.15
SiA814DJ
Vishay Siliconix
ID = 3.3 A
10 0.10
TJ = 125 °C
TJ = 150 °C
TJ = 25 °C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
- 50 - 25
ID = 250 µA
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
10
0.05
TJ = 25 °C
0.00
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
20
15
10
5
0
0.001 0.01
0.1
1
10 100 1000
Pulse (s)
Single Pulse Power (Junction-to-Ambient)
100 µs
1
1 ms
10 ms
0.1
0.01
0.1
TA = 25 °C
Single Pulse
1
BVDSS
Limited
10
100 ms
1 s, 10 s
DC
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 68672
S-81176-Rev. A, 26-May-08
www.vishay.com
5
5 Page 
Application Note 826
Vishay Siliconix
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Dual
0.300 (0.012)
2.500 (0.098)
0.350 (0.014)
0.325 (0.013)
0.613 (0.024)
0.275 (0.011)
2.500 (0.098)
0.950 (0.037)
0.475 (0.019)
0.275 (0.011)
0.160 (0.006)
Return to Index
1
0.650 (0.026)
1.600 (0.063)
Dimensions in mm (inches)
www.vishay.com
1
Document Number: 70487
Revision: 18-Oct-13
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet SiA814DJ.PDF ] | |
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