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PDF SIM100D12SV1 Data sheet ( Hoja de datos )
| Número de pieza | SIM100D12SV1 | |
| Descripción | HALF-BRIDGE IGBT | |
| Fabricantes | SemiWell Semiconductor | |
| Logotipo |  |
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Preliminary
“HALF-BRIDGE” IGBT
Features
Applications
▪ rench gate + field stopper, using
Infineon chip design
▪ AC & DC Motor controls
▪ 10µs Short circuit capability
▪ VVVF inverters
▪ Low turn-off losses
▪ Optimized for high frequency inverter
▪ Short tail current for over 18KHz
Type Welding machines
▪ Positive VCE(on)
▪ High frequency SMPS
temperature coefficient
▪ UPS, Robotics
SIM100D12SV1
VCES = 1200V
Ic = 100A
VCE(ON) typ. = 1.7V
@ Ic = 100A
Absolute Maximum Ratings @ Tc = 25 (per leg)
Package : V1
Symbol
Parameter
Condition
VCES
Collector-to-Emitter Voltage
VGES
Gate emitter voltage
IC Continuous Collector Current
ICM Pulsed collector current
IF Diode Continuous Forward Current
IFM Diode Maximum Forward Current
TSC Short Circuit Withstand Time
Viso Isolation Voltage test
Tj Junction Temperature
Tstg Storage Temperature
Weight Weight of Module
Mounting Power Terminal Screw : M5
Torque Terminal connection Screw : M5
VGE = 0V, IC = 500µA
TC = 80
TC = 25
TC = 80
TC=
AC 1 minute
Ratings
1200
± 20
100(140)
200
100(140)
200
10
2500
-40 ~ 150
-40 ~ 125
190
3.5
3.5
Unit
V
V
A
A
A
A
µs
V
g
Nm
Nm
1 page  
Preliminary
SIM100D12SV1
Fig 9. Typ. Capacitance vs. VCE
VGE = 0V; f = 1Mhz
Fig 10. Typical Gate Charge vs. VGE
ICE = 60A; L = 600µH
Fig 11. Typ. Switching Time vs. IC
TJ = 125 ; L = 200µH; VCE = 600V
RG = 3.9Ω; VGE = 15V
Fig 12. Typ. Switching Time vs. RG
TJ = 125 ; L = 200µH; VCE = 600V
ICE = 100A; VGE = 15V
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SIM100D12SV1.PDF ] | |
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