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PDF ATP302 Data sheet ( Hoja de datos )
| Número de pieza | ATP302 | |
| Descripción | P-Channel Power MOSFET | |
| Fabricantes | ON Semiconductor | |
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Ordering number : ENA1654A
ATP302
P-Channel Power MOSFET
–60V, –70A, 13mΩ, ATPAK
http://onsemi.com
Features
• ON-resistance RDS(on)1=10mΩ (typ.)
• 4.5V drive
• Input capacitance Ciss=5400pF (typ.)
• Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
Note :*1 VDD=--36V, L=100μH, IAV=--42A
*2 L≤100μH, Single pulse
Conditions
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
--60
±20
--70
--280
70
150
--55 to +150
197
--42
Unit
V
V
A
A
W
°C
°C
mJ
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7057-001
6.5 1.5
0.4
4
ATP302-TL-H
4.6
2.6
0.4
Product & Package Information
• Package
: ATPAK
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
ATP302
LOT No.
TL
2
1
0.8
3
0.6
2.3 2.3
0.55
0.4
1 : Gate
2 : Drain
3 : Source
4 : Drain
ATPAK
Electrical Connection
2,4
1
3
Semiconductor Components Industries, LLC, 2013
July, 2013
62712 TKIM/21710QA TKIM TC-00002247 No. A1654-1/7
1 page  
Taping Specification
ATP302-TL-H
ATP302
No. A1654-5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet ATP302.PDF ] | |
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