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Datasheet PJEC5V0V6FN2-PDF.HTML Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category


PJE Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1PJE138L60V N-Channel Enhancement Mode MOSFET

PPJE138L 60V N-Channel Enhancement Mode MOSFET Voltage 60 V Current 160mA Features  RDS(ON) , VGS@10V, ID@160mA<4.2Ω  RDS(ON) , [email protected], ID@100mA<5Ω  RDS(ON) , [email protected], ID@50mA<7Ω  Advanced Trench Process Technology  ESD Protected  Specially Designed for Relay driver,
Pan Jit International
Pan Jit International		mosfet
2PJE5V0M1FN2Low Capacitance TVS/ESD Protection

PPJE5V0M1FN2 Low Capacitance TVS/ESD Protection VRWM 5V Features  Bidirectional ESD protection of one line  IEC61000-4-2(ESD): ±15kV Air, ±8kV Contact Compliance  IEC61000-4-4(EFT): 20A(5/50nS)  IEC61000-4-5(Lightning): 2A(8/20S)  Low leakage current, maximum of 0.5A at r
Pan Jit International
Pan Jit International		data
3PJE5V0U8TB6Low Capacitance ESD Protection

PPJE5V0U8TB6 Low Capacitance ESD Protection VRWM 5V Features  IEC61000-4-2(ESD): ±17kV Air, ±12kV Contact Compliance  IEC61000-4-4(EFT): 40A(5/50nS)  IEC61000-4-5(Lightning): 5A(8/20S)  Low leakage current, maximum 0.1A at rated voltage  Lead free in compliance with EU Ro
Pan Jit International
Pan Jit International		data
4PJE840020V N-Channel Enhancement Mode MOSFET

PPJE8400 20V N-Channel Enhancement Mode MOSFET Voltage 20 V Current 1.1A Features  RDS(ON) , [email protected], [email protected]<88mΩ  RDS(ON) , [email protected], [email protected]<100mΩ  RDS(ON) , [email protected], [email protected]<130mΩ  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Applicati
Pan Jit International
Pan Jit International		mosfet
5PJE840120V P-Channel Enhancement Mode MOSFET

PPJE8401 20V P-Channel Enhancement Mode MOSFET Voltage -20 V Current -0.9A Features  RDS(ON) , [email protected], [email protected]<130mΩ  RDS(ON) , [email protected], [email protected]<160mΩ  RDS(ON) , [email protected], [email protected]<210mΩ  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM A
Pan Jit International
Pan Jit International		mosfet
6PJE840320V P-Channel Enhancement Mode MOSFET

PPJE8403 20V P-Channel Enhancement Mode MOSFET – ESD Protected Voltage -20 V Current -0.6A SOT-523 Features  RDS(ON) , [email protected], [email protected]<340mΩ  RDS(ON) , [email protected], [email protected]<420mΩ  RDS(ON) , [email protected], [email protected]<600mΩ  Advanced Trench Process Technology  Specially Desi
Pan Jit International
Pan Jit International		mosfet
7PJE840430V N-Channel Enhancement Mode MOSFET

PPJE8404 30V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 30 V Current 0.6A SOT-523 Features  RDS(ON) , VGS@4,5V, [email protected]<220mΩ  RDS(ON) , [email protected], [email protected]<290mΩ  RDS(ON) , [email protected], [email protected]<600mΩ  Advanced Trench Process Technology  Specially Designed fo
Pan Jit International
Pan Jit International		mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
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